DMN66D0LT
0.6
1
V DS = 5V
0.5
0.4
0.3
0.1
Pulsed
0.2
T A = 150°C
0.1
T A = 85°C
T A = 25°C
T A = -55°C
0
0.01
1
2 3 4
5
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
9
2.5
8
2.0
7
6
5
1.5
4
3
2
V GS = 5V
V GS = 10V
1.0
0.5
1
0
0.1 0.2 0.3 0.4 0.5 0.6
0
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
I D = 250μA
100
10
C iss
C oss
1.0
-50
-25 0 25 50 75 100 125 150
1
0
C rss
5 10 15 20 25 30 35
40
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
2 of 4
www.diodes.com
September 2008
? Diodes Incorporated
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